和歌山大学 システム工学部 精密物質学科 ナノサイエンス系 物性理論研究室

篠塚雄三教授に関するページです。

Introduction

学歴
1975　　東京教育大学理学部物理学科卒業
1980　　東京大学大学院理学系研究科博士課程修了
　　　　理学博士（半導体中の深い不純物準位を介しての電子正孔無輻射再結合）

職歴
1980-1981　日本学術振興会 奨励研究員
1981-1987　山口大学工学部 講師
1987-1995　山口大学工学部 助教授
1996-1999　山口大学工学部 教授
1999-現在　 和歌山大学システム工学部 教授

所属学会：日本物理学会、応用物理学会、Materials Research Society

Articles

著書・論文などのリストです。

▼著書

  1. “Materials and Reliability Handbook for Semiconductor Optical and Electron Devices” Ed. by O. Ueda and S. Pearton (Springer, 2012) Chapter 10.
  2. 「励起ナノプロセス入門 －基礎と将来展望－」篠塚雄三編集　第48回応用物理学会スクールテキスト (2011)
  3. "Defects in Optoelectronic Materials" Ed. by Kazumi Wada and Stella W. Pang (Gordon and Breach Science Publishers, 2001) Chapter 8.
  4. 「基礎物理学 -波動・光・熱-」嶋村修二、荻原千聡 編著（朝倉書店、1996）第2章(pp. 61～101)執筆
  5. 「電子励起による非平衡固体ダイナミックス」固体物理別冊特集号　篠塚雄三、吉田博 編集（アグネ技術センター、1993）

▼原著論文

  1. Electronic structure calculation of Si1-xSnx compound alloy using interacting quasi-band theory
    M. Oda, Y. Kuroda, A. Kishi, and Y. Shinozuka: Phys. Status Solidi B 254, 1600519 (2017)
  2. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure
    Ayaka Kishi, Masato Oda, and Yuzo Shinozuka: Jpn. J. of Appl. Phys. 55, 051202 (2016)
  3. Interacting quasi-band model for electronic states in compound semiconductor alloys: Zincblende structure
    Y. Shinozuka and M. Oda: Jpn. J. of Appl. Phys. 54, 091202 (2015)
  4. Interacting quasi-band model for electronic states in alloy semiconductors: Relation to average t-matrix approximation and band anticrossing model
    Y. Shinozuka: Applied Physics Express 7, 071201 (2014)
  5. Electronic structures of lipid bilayer membrane reinforced with siloxane bond
    S. Yabushita, M. Oda, and Y. Shinozuka: e-J. Surf. Sci. Nanotech. 12 (2014) 112-114
  6. Origin of electronic transport of lithium phthalocyanine iodine crystal
    Noritake Koike, Masato Oda, and Yuzo Shinozuka: AIP Conference Proceedings 1566 (2013) 183-184
  7. Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism
    Masaki Wakita, Kei Suzuki, and Yuzo Shinozuka: AIP Conference Proceedings 1583 (2013) 204-207
  8. Mechanisms of structural changes induced by electronic excitations in solids
    Y. Shinozuka: "Damage to VUV, EUV, and X-ray Optics" Proc. of SPIE 8777 (2013) 87770D-9
  9. Phonon-Kick Mechanism for Defect Reactions in Semiconductors
    Y. Shinozuka, M. Wakita, and K. Suzuki: Jpn. J. Appl. Phys.51 (2012) PC03-1-5
  10. Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects
    K. Suzuki, M. Wakita and Y. Shinozuka: Mater. Res. Soc. Symp. Proc. Vol. 1432　(2012) G5.2.
  11. Mechanism of Defect Reactions in Semiconductors
    Y. Shinozuka: Mater. Res. Soc. Symp. Proc. Vol. 1195　(2010) B02-02 (invited).
  12. Analysis of non-exponential decay of photogenerated carriers by recombination
    T. Bando, K. Koshino, C. Itoh and Y. Shinozuka: physica status solidi (c) 6 (2008) 105-107.
  13. Electronic Structures of a Quantum Well of A1-xBx Alloy Semiconductor in the Coherent Potential Approximation
    Y. Shinozuka: Jpn. J. of Appl. Phys. 45 (2006) 8733-8739.
  14. Structural changes at a Td impurity induced by intra-photoexcitation and carrier capture
    I. Takahashi and Y. Shinozuka: Physica b 340-342 (2003) 349-352.
  15. Electronic Structures of a Quantum Well of A1-xBx Alloy Semiconductor in the Coherent Potential Approximation
    Y. Shinozuka, H. Kida and M. Fujibayashi: Physica Status Solidi (b) 229 (2002) 553-556.
  16. Resonant tunneling through a single self-assembled InAs quantum dots in a micro-RTD structure
    I. Kamiya, Ichiro Tanaka, K. Tanaka, F. Yamada, Y. Shinozuka, and H. Sakaki: Physica E 13, issues 2-4 (2002) 131-133.
  17. Mechanisms of capture- and recombination-enhanced defect reactions in semiconductors
    Y. Shinozuka: Physica B 308-310 (2001) 506-509.
  18. Multiple coherent nonradiative recombination mechanism of defect reactions in semiconductors
    Y. Shinozuka: Springer Proceedings in Physics Vol. 87, Proc.25th Int. Conf. Phys. Semiconductors. (2001) 1447-1448.
  19. Optical Properties of a Quantum Well of A1-x Bx Alloy Semiconductor in the Coherent Potential Approximation
    Y. Shinozuka, H. Kida and M. Watarikawa: Proc. MRS Fall meeting Vol. 639 (2001) G6.36.1-6.
  20. Hybridization in Electronic States and Optical Properties of Amorphous Covalent Semiconductors
    Y. Shinozuka: Proc. MRS Fall meeting Vol. 588 (2000) 309-314.
  21. Transient Lattice Vibration Induced by Coherent Carrier Captures at a Deep-Level Defect and the Effects on Defect Reactions
    Y. Shinozuka and T. Karatsu: Physica B 273-274 (1999) 999-1002.
  22. Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect andthe Effects on Defect Reactions
    Y. Shinozuka and T. Karatsu: Materials Science Forum 258-263 (1998) 659-664.
  23. Structural Change and Relaxation Processes of Tetrahedral Point Defects
    El-Maghraby Mohamed and Y. Shinozuka: Materials Science Forum 258-263 (1998) 647-652.
  24. Structural Change of a Four-site Tetrahedral System with Arbitrary Electron Occupancy
    El-Maghraby Mohamed and Y. Shinozuka: J. Phys. Soc. Jpn. 67 (1998) 3524-3535.
  25. Symmetry-Breaking Electronic-Atomic Processes in s-p Bonding Materials
    Y. Shinozuka: Proc. 19th Taniguchi Symposium, Solid-State Science 124 (Springer, 1997) 229-236.
  26. Mechanism of Defect Reactions in Semiconductors,
    Y. Shinozuka: Proc. MRS 1996 Fall Meeting 442 (Material Research Society, 1997) 225-230.
  27. Structural Change and Relaxation Processes of Two-site Hetero System
    Y. Shinozuka and M. El Maghraby: Proc. 2nd Int. Conf. on Excitonic Processes in Condensed Matter (Dresden University Press, 1996) 335-338.
  28. Coexsistence of Large-Radius and Small-Radius Polaron States in a Quantum Wire
    Y. Shinozuka and N. Ishida: Il Nuovo Cimento 17 (11-12) (1995) 1723-1728.
  29. Extrinsic Self-trapping of an Electron in Quantum-Well Structures
    Y. Shinozuka: Materials Science Forum 196-201 (1995) 403-408.
  30. Reconstruction of Semiconductors by Atomic Transfer Induced by Electronic Excitation
    Y. Shinozuka: Proc. 22rd Int. Conf. on the Physics of Semiconductors (World Scientific, 1995) 169-172.
  31. Self-Trapping of an Exciton in Quasi-Low Dimensional Systems
    Y. Shinozuka and N. Ishida: J. Phys. Soc. Jpn. 64 (1995) 3007-3017.
  32. Electron-Lattice Interaction in Non-Metallic Materials - Configuration Coordinate Diagram and Lattice Relaxation -
    Y. Shinozuka: Jpn. J. Appl. Phys. 32 (1993) 4560-4570 (Invited Paper).
  33. Theoretical Study of Lattice Relaxation Phenomena at Localized Centers
    Y. Shinozuka: New Functional Materials Vol. A, eds. by T. Tsuruta et al. (Elsevier Science Publishers B. V, 1993) 93-100.
  34. Reconsideration of Electron-Lattice Interaction in Amorphous Semiconductors
    Y. Shinozuka: J. Non-Crystalline Solid 164-166 (1993) 567-570.
  35. Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells
    Y. Shinozuka: Materials Science Forum 117&118 (1993) 99-104.
  36. Stability of the Positions of an Interstitial Impurity Atom and the Electronic States in Semiconductors
    Y. Shinozuka: Materials Science Forum 83-87 (1992) 527-532.
  37. Theoretical Study on Photo-Structural Change of Weak Bond in Tetrahedrally-Bonded Amorphous Semiconductors
    Y. Shinozuka and Y. Ishihara: J. Non-Crystalline Solid 137&138 (1991) 219-222.
  38. Theory of Intrinsic Electronic States and Lattice Relaxation Processes in Amorphous Semiconductors
    Y. Shinozuka: Review of Solid State Science 4 (1990) 691-696.
  39. Self-Trapping in Mixed Crystal. II. Concentration Dependence
    Y. Shinozuka: J. Phys. Soc. Jpn. 59 (1990) 1322-1332.
  40. Excitons in Type II Quantum Well Systems
    M. Matsuura and Y. Shinozuka: Proc. 1st Int. Conf. on Electronic Materials (1988) 225-228.
    41. 1
  41. Excitons in Type II Quantum Well Systems: Binding of the Spatially Separated Electron and Hole
    M. Matsuura and Y. Shinozuka: Pys. Rev. B38 (1988) 9830-9837.
  42. Self-Consistent Mean-Field Theory for Interacting Electrons in Three Dimensional Deformable Lattice
    Y. Shinozuka: J. Phys. Soc. Jpn. 56 (1987) 4477-4488.
  43. Many-Body Theory of Electronic Excitations in Disordered Semiconductors
    G. Vignale, W. Hanke and Y. Shinozuka: Proc. 18th Int. Conf. on the Physics of Semiconductors (World Scientific, 1986) 1145-1148.
  44. Effect of Quantum Hopping on the Coulomb Gap of Localized Electrons in Disordered Systems
    G. Vignale, Y. Shinozuka and W. Hanke: Phys. Rev. B34 (1986) 3003-3006.
  45. Self-Shrinking of Electronic States below the Mobility Edge in Disordered Semiconductors
    Y. Shinozuka: J. Non-Crystalline Solids 77&78 (1985) 21-24.
  46. A Wannier Exciton in a Quantum Well: Subband Dependence
    M. Matsuura and Y. Shinozuka: J. Phys. Soc. Jpn. 53 (1984) 3138-3145.
  47. Wannier Exciton in Quantum Wells
    Y. Shinozuka and M. Matsuura: Phys. Rev. B28 (1983) 4878-4881.
  48. Two Bands Model for Nonradiative Multiphonon Recombination at Deep-Level Defects in Semiconductors
    Y. Shinozuka: J. Phys. Soc. Jpn. 51 (1982) 2852-2861.
  49. Strong Interaction between Electron and the Lattice at Deep-Level Defects
    Y. Shinozuka: Proc. 11th Int. Conf. on Defects and Radiation Effects in Semiconductors, Inst.
    Conf. Ser. No. 59 (1981) 157-162.
  50. Stability of an Electron in Deformable Lattice - Force Range, Dimensionality, Potential Barrier -
    Y. Toyozawa and Y. Shinozuka: J. Phys. Soc. Jpn. 48 (1980) 472-478.
  51. Self-Trapping in Mixed Crystal - Clustering, Dimensionality, Percolation -
    Y. Shinozuka and Y. Toyozawa: J. Phys. Soc. Jpn. 46 (1979) 505-514.

▼総説・解説等

  1. 「励起ナノプロセス入門 －基礎と将来展望－」
    篠塚雄三　　第48回応用物理学会スクール (2011) 1-12.
  2. 「電子励起を用いた原子分子操作」
    前田康二、篠塚雄三　　日本物理学会誌 58 (2003) 414-421.
  3. 「電子励起構造変化と新物質相」
    篠塚雄三　　固体物理 32 (1997) 785-793.
  4. 会議だより JRCATワークショップ「電子励起による新物質科学」
    篠塚雄三　　固体物理 30 (1995) 407-412.
  5. 「電子励起による非平衡固体の世界」
    萱沼洋輔、篠塚雄三　　固体物理特集号<電子励起による非平衡固体ダイナミックス> (アグネ技術センター, 1993) 1-8.
  6. 「アモルファス半導体における電子格子相互作用と局在中心」
    篠塚雄三　　固体物理 27 (1992) 908-913.
  7. 「混晶化が引き起こす半導体励起子の自己束縛」
    篠塚雄三　　日本物理学会誌 45 (1990) 331-334.
  8. 「半導体中の深い不純物準位に対する配位座標モデルについて」
    篠塚雄三　　応用物理 57 (1988) 1877-1882.
  9. 「半導体・絶縁体のポーラロン効果」
    松浦満、篠塚雄三　　固体物理　光物性、電子格子相互作用特集号(1987) 32-39.
  10. 「移動度端と電子格子相互作用」
    篠塚雄三　　固体物理 20 (1985) 573-578.
  11. 「半導体中の欠陥の動的物性」
    篠塚雄三　　応用物理 51 (1982) 192-197.
  12. 「第3回ルンド国際会議印象記 －半導体中の深い準位に関する国際会議－」
    篠塚雄三　　応用物理 50 (1981) 1237-1238.
  13. 「電子と格子の強い相互作用」
    篠塚雄三、豊沢豊　　固体物理 14 (1979) 526-535.
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