和歌山大学 システム工学部 精密物質学科 ナノサイエンス系 物性理論研究室

篠塚雄三教授に関するページです。

Introduction

学歴
1975　　東京教育大学理学部物理学科卒業
1980　　東京大学大学院理学系研究科博士課程修了
　　　　理学博士（半導体中の深い不純物準位を介しての電子正孔無輻射再結合）

職歴
1980-1981　日本学術振興会 奨励研究員
1981-1987　山口大学工学部 講師
1987-1995　山口大学工学部 助教授
1996-1999　山口大学工学部 教授
1999-現在　 和歌山大学システム工学部 教授

所属学会：日本物理学会、応用物理学会、Materials Research Society

Articles

著書・論文などのリストです。

▼著書

  1. “Materials and Reliability Handbook for Semiconductor Optical and Electron Devices” Ed. by O. Ueda and S. Pearton (Springer, 2012) Chapter 10.
  2. 「励起ナノプロセス入門 −基礎と将来展望−」篠塚雄三編集　第48回応用物理学会スクールテキスト (2011)
  3. "Defects in Optoelectronic Materials" Ed. by Kazumi Wada and Stella W. Pang (Gordon and Breach Science Publishers, 2001) Chapter 8.
  4. 「基礎物理学 -波動・光・熱-」嶋村修二、荻原千聡 編著（朝倉書店、1996）第2章(pp. 61〜101)執筆
  5. 「電子励起による非平衡固体ダイナミックス」固体物理別冊特集号　篠塚雄三、吉田博 編集（アグネ技術センター、1993）

▼原著論文

  1. Electronic structure calculation of Si1-xSnx compound alloy using interacting quasi-band theory
    M. Oda, Y. Kuroda, A. Kishi, and Y. Shinozuka: Phys. Status Solidi B 254, 1600519 (2017)
  2. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure
    Ayaka Kishi, Masato Oda, and Yuzo Shinozuka: Jpn. J. of Appl. Phys. 55, 051202 (2016)
  3. Interacting quasi-band model for electronic states in compound semiconductor alloys: Zincblende structure
    Y. Shinozuka and M. Oda: Jpn. J. of Appl. Phys. 54, 091202 (2015)
  4. Interacting quasi-band model for electronic states in alloy semiconductors: Relation to average t-matrix approximation and band anticrossing model
    Y. Shinozuka: Applied Physics Express 7, 071201 (2014)
  5. Electronic structures of lipid bilayer membrane reinforced with siloxane bond
    S. Yabushita, M. Oda, and Y. Shinozuka: e-J. Surf. Sci. Nanotech. 12 (2014) 112-114
  6. Origin of electronic transport of lithium phthalocyanine iodine crystal
    Noritake Koike, Masato Oda, and Yuzo Shinozuka: AIP Conference Proceedings 1566 (2013) 183-184
  7. Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism
    Masaki Wakita, Kei Suzuki, and Yuzo Shinozuka: AIP Conference Proceedings 1583 (2013) 204-207
  8. Mechanisms of structural changes induced by electronic excitations in solids
    Y. Shinozuka: "Damage to VUV, EUV, and X-ray Optics" Proc. of SPIE 8777 (2013) 87770D-9
  9. Phonon-Kick Mechanism for Defect Reactions in Semiconductors
    Y. Shinozuka, M. Wakita, and K. Suzuki: Jpn. J. Appl. Phys.51 (2012) PC03-1-5
  10. Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects
    K. Suzuki, M. Wakita and Y. Shinozuka: Mater. Res. Soc. Symp. Proc. Vol. 1432　(2012) G5.2.
  11. Mechanism of Defect Reactions in Semiconductors
    Y. Shinozuka: Mater. Res. Soc. Symp. Proc. Vol. 1195　(2010) B02-02 (invited).
  12. Analysis of non-exponential decay of photogenerated carriers by recombination
    T. Bando, K. Koshino, C. Itoh and Y. Shinozuka: physica status solidi (c) 6 (2008) 105-107.
  13. Electronic Structures of a Quantum Well of A1-xBx Alloy Semiconductor in the Coherent Potential Approximation
    Y. Shinozuka: Jpn. J. of Appl. Phys. 45 (2006) 8733-8739.
  14. Structural changes at a Td impurity induced by intra-photoexcitation and carrier capture
    I. Takahashi and Y. Shinozuka: Physica b 340-342 (2003) 349-352.
  15. Electronic Structures of a Quantum Well of A1-xBx Alloy Semiconductor in the Coherent Potential Approximation
    Y. Shinozuka, H. Kida and M. Fujibayashi: Physica Status Solidi (b) 229 (2002) 553-556.
  16. Resonant tunneling through a single self-assembled InAs quantum dots in a micro-RTD structure
    I. Kamiya, Ichiro Tanaka, K. Tanaka, F. Yamada, Y. Shinozuka, and H. Sakaki: Physica E 13, issues 2-4 (2002) 131-133.
  17. Mechanisms of capture- and recombination-enhanced defect reactions in semiconductors
    Y. Shinozuka: Physica B 308-310 (2001) 506-509.
  18. Multiple coherent nonradiative recombination mechanism of defect reactions in semiconductors
    Y. Shinozuka: Springer Proceedings in Physics Vol. 87, Proc.25th Int. Conf. Phys. Semiconductors. (2001) 1447-1448.
  19. Optical Properties of a Quantum Well of A1-x Bx Alloy Semiconductor in the Coherent Potential Approximation
    Y. Shinozuka, H. Kida and M. Watarikawa: Proc. MRS Fall meeting Vol. 639 (2001) G6.36.1-6.
  20. Hybridization in Electronic States and Optical Properties of Amorphous Covalent Semiconductors
    Y. Shinozuka: Proc. MRS Fall meeting Vol. 588 (2000) 309-314.
  21. Transient Lattice Vibration Induced by Coherent Carrier Captures at a Deep-Level Defect and the Effects on Defect Reactions
    Y. Shinozuka and T. Karatsu: Physica B 273-274 (1999) 999-1002.
  22. Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect andthe Effects on Defect Reactions
    Y. Shinozuka and T. Karatsu: Materials Science Forum 258-263 (1998) 659-664.
  23. Structural Change and Relaxation Processes of Tetrahedral Point Defects
    El-Maghraby Mohamed and Y. Shinozuka: Materials Science Forum 258-263 (1998) 647-652.
  24. Structural Change of a Four-site Tetrahedral System with Arbitrary Electron Occupancy
    El-Maghraby Mohamed and Y. Shinozuka: J. Phys. Soc. Jpn. 67 (1998) 3524-3535.
  25. Symmetry-Breaking Electronic-Atomic Processes in s-p Bonding Materials
    Y. Shinozuka: Proc. 19th Taniguchi Symposium, Solid-State Science 124 (Springer, 1997) 229-236.
  26. Mechanism of Defect Reactions in Semiconductors,
    Y. Shinozuka: Proc. MRS 1996 Fall Meeting 442 (Material Research Society, 1997) 225-230.
  27. Structural Change and Relaxation Processes of Two-site Hetero System
    Y. Shinozuka and M. El Maghraby: Proc. 2nd Int. Conf. on Excitonic Processes in Condensed Matter (Dresden University Press, 1996) 335-338.
  28. Coexsistence of Large-Radius and Small-Radius Polaron States in a Quantum Wire
    Y. Shinozuka and N. Ishida: Il Nuovo Cimento 17 (11-12) (1995) 1723-1728.
  29. Extrinsic Self-trapping of an Electron in Quantum-Well Structures
    Y. Shinozuka: Materials Science Forum 196-201 (1995) 403-408.
  30. Reconstruction of Semiconductors by Atomic Transfer Induced by Electronic Excitation
    Y. Shinozuka: Proc. 22rd Int. Conf. on the Physics of Semiconductors (World Scientific, 1995) 169-172.
  31. Self-Trapping of an Exciton in Quasi-Low Dimensional Systems
    Y. Shinozuka and N. Ishida: J. Phys. Soc. Jpn. 64 (1995) 3007-3017.
  32. Electron-Lattice Interaction in Non-Metallic Materials - Configuration Coordinate Diagram and Lattice Relaxation -
    Y. Shinozuka: Jpn. J. Appl. Phys. 32 (1993) 4560-4570 (Invited Paper).
  33. Theoretical Study of Lattice Relaxation Phenomena at Localized Centers
    Y. Shinozuka: New Functional Materials Vol. A, eds. by T. Tsuruta et al. (Elsevier Science Publishers B. V, 1993) 93-100.
  34. Reconsideration of Electron-Lattice Interaction in Amorphous Semiconductors
    Y. Shinozuka: J. Non-Crystalline Solid 164-166 (1993) 567-570.
  35. Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells
    Y. Shinozuka: Materials Science Forum 117&118 (1993) 99-104.
  36. Stability of the Positions of an Interstitial Impurity Atom and the Electronic States in Semiconductors
    Y. Shinozuka: Materials Science Forum 83-87 (1992) 527-532.
  37. Theoretical Study on Photo-Structural Change of Weak Bond in Tetrahedrally-Bonded Amorphous Semiconductors
    Y. Shinozuka and Y. Ishihara: J. Non-Crystalline Solid 137&138 (1991) 219-222.
  38. Theory of Intrinsic Electronic States and Lattice Relaxation Processes in Amorphous Semiconductors
    Y. Shinozuka: Review of Solid State Science 4 (1990) 691-696.
  39. Self-Trapping in Mixed Crystal. II. Concentration Dependence
    Y. Shinozuka: J. Phys. Soc. Jpn. 59 (1990) 1322-1332.
  40. Excitons in Type II Quantum Well Systems
    M. Matsuura and Y. Shinozuka: Proc. 1st Int. Conf. on Electronic Materials (1988) 225-228.
    41. 1
  41. Excitons in Type II Quantum Well Systems: Binding of the Spatially Separated Electron and Hole
    M. Matsuura and Y. Shinozuka: Pys. Rev. B38 (1988) 9830-9837.
  42. Self-Consistent Mean-Field Theory for Interacting Electrons in Three Dimensional Deformable Lattice
    Y. Shinozuka: J. Phys. Soc. Jpn. 56 (1987) 4477-4488.
  43. Many-Body Theory of Electronic Excitations in Disordered Semiconductors
    G. Vignale, W. Hanke and Y. Shinozuka: Proc. 18th Int. Conf. on the Physics of Semiconductors (World Scientific, 1986) 1145-1148.
  44. Effect of Quantum Hopping on the Coulomb Gap of Localized Electrons in Disordered Systems
    G. Vignale, Y. Shinozuka and W. Hanke: Phys. Rev. B34 (1986) 3003-3006.
  45. Self-Shrinking of Electronic States below the Mobility Edge in Disordered Semiconductors
    Y. Shinozuka: J. Non-Crystalline Solids 77&78 (1985) 21-24.
  46. A Wannier Exciton in a Quantum Well: Subband Dependence
    M. Matsuura and Y. Shinozuka: J. Phys. Soc. Jpn. 53 (1984) 3138-3145.
  47. Wannier Exciton in Quantum Wells
    Y. Shinozuka and M. Matsuura: Phys. Rev. B28 (1983) 4878-4881.
  48. Two Bands Model for Nonradiative Multiphonon Recombination at Deep-Level Defects in Semiconductors
    Y. Shinozuka: J. Phys. Soc. Jpn. 51 (1982) 2852-2861.
  49. Strong Interaction between Electron and the Lattice at Deep-Level Defects
    Y. Shinozuka: Proc. 11th Int. Conf. on Defects and Radiation Effects in Semiconductors, Inst.
    Conf. Ser. No. 59 (1981) 157-162.
  50. Stability of an Electron in Deformable Lattice - Force Range, Dimensionality, Potential Barrier -
    Y. Toyozawa and Y. Shinozuka: J. Phys. Soc. Jpn. 48 (1980) 472-478.
  51. Self-Trapping in Mixed Crystal - Clustering, Dimensionality, Percolation -
    Y. Shinozuka and Y. Toyozawa: J. Phys. Soc. Jpn. 46 (1979) 505-514.

▼総説・解説等

  1. 「励起ナノプロセス入門 −基礎と将来展望−」
    篠塚雄三　　第48回応用物理学会スクール (2011) 1-12.
  2. 「電子励起を用いた原子分子操作」
    前田康二、篠塚雄三　　日本物理学会誌 58 (2003) 414-421.
  3. 「電子励起構造変化と新物質相」
    篠塚雄三　　固体物理 32 (1997) 785-793.
  4. 会議だより JRCATワークショップ「電子励起による新物質科学」
    篠塚雄三　　固体物理 30 (1995) 407-412.
  5. 「電子励起による非平衡固体の世界」
    萱沼洋輔、篠塚雄三　　固体物理特集号<電子励起による非平衡固体ダイナミックス> (アグネ技術センター, 1993) 1-8.
  6. 「アモルファス半導体における電子格子相互作用と局在中心」
    篠塚雄三　　固体物理 27 (1992) 908-913.
  7. 「混晶化が引き起こす半導体励起子の自己束縛」
    篠塚雄三　　日本物理学会誌 45 (1990) 331-334.
  8. 「半導体中の深い不純物準位に対する配位座標モデルについて」
    篠塚雄三　　応用物理 57 (1988) 1877-1882.
  9. 「半導体・絶縁体のポーラロン効果」
    松浦満、篠塚雄三　　固体物理　光物性、電子格子相互作用特集号(1987) 32-39.
  10. 「移動度端と電子格子相互作用」
    篠塚雄三　　固体物理 20 (1985) 573-578.
  11. 「半導体中の欠陥の動的物性」
    篠塚雄三　　応用物理 51 (1982) 192-197.
  12. 「第3回ルンド国際会議印象記 −半導体中の深い準位に関する国際会議−」
    篠塚雄三　　応用物理 50 (1981) 1237-1238.
  13. 「電子と格子の強い相互作用」
    篠塚雄三、豊沢豊　　固体物理 14 (1979) 526-535.
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